Control of plasma kinetics for microelectronics fabrication by
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منابع مشابه
Cryogenic etching of silicon with SF6/O2/SiF4 plasmas: a modelling and experimental study
Cyrogenic etching of silicon is envisaged to enable better control over plasma processing in microelectronics and to limit plasma induced damage for features beyond the 14 nm technology node. We here present results of plasma modelling for a SF6/O2/SiF4 plasma and of molecular dynamics (MD) simulations for predicting surface interactions, together with results of etch experiments for validation.
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As microelectronics device feature sizes continue to shrink and wafers continue to increase in size, it is necessary to have tighter tolerances during the fabrication process to maintain high yields. Feedback control has, therefore, become an important issue in plasma processing equipment design. Comprehensive plasma equipment models linked to control algorithms would greatly aid in the investi...
متن کاملVirtual Plasma Equipment Model: A Tool For Investigating Feedback Control In Plasma Processing Equip - Semiconductor Manufacturing, IEEE Transactions on
As microelectronics device feature sizes continue to shrink and wafers continue to increase in size, it is necessary to have tighter tolerances during the fabrication process to maintain high yields. Feedback control has, therefore, become an important issue in plasma processing equipment design. Comprehensive plasma equipment models linked to control algorithms would greatly aid in the investi...
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تاریخ انتشار 2014